Low threshold current density operation of GaInNAsquantum well lasers grown by metalorganic chemical vapourdeposition

A metal organic chemical vapour deposition grown GaInNAs quantum well laser emitting at 1.25 µm is reported. The lowest threshold current density obtained by 50 µm wide stripe lasers was 340 A/cm2 for a cavity length of 1420 µm, which is almost comparable to the lowest value reported for GaInNAs lasers grown by molecular beam epitaxy. The threshold current density per well was 170 A/cm2, which is the lowest threshold value reported to date.