A novel vertical-cavity surface-emitting laser structure has been fabricated with low loss and high reflectivity a-Al2O3/a-Si distributed Bragg reflectors. The active region consists of AlGaInAs multiple quantum wells and a tunnel junction and has been grown by a single-step metal-organic chemical vapor deposition. Laser emission at 1.3 μm was achieved under continuous-wave operation at room temperature.
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Nguyen et al. (2003) studied this question.
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