Kinetics of selective epitaxial deposition of Si1−xGex

The kinetics of selective deposition of epitaxial Si1−xGex layers in an atmospheric-pressure reactor have been examined. Adding HCl to the SiH2Cl2/GeH4/H2 system decreases the Si component of the deposition rate more than the Ge component, increasing the Ge fraction in the deposited layer. HCl addition also decreases boron incorporation. When deposited selectively on oxide-patterned wafers, lateral transport of the depositing materials causes the deposition rate and the Ge fraction to be higher in small patterns than in large patterns and also to be higher near the edges of patterns than at their centers.