The structure of GaAs=GaSb(001) incoherent interface has been studied by grazing incidence x-ray scattering. The interface is periodic with a square array of edge dislocations. It is shown that the interface is nonplanar with 2–4 GaAs monolayers protruding in the GaSb epilayer at the dislocation core. This corrugated interface does not increase the strain energy by a large factor. Two possible mechanisms are suggested for the interface formation of large misfit epitactic growth: a stress induced mechanism or the presence of an ordered intermediate 2D layer.
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Bourret et al. (1992) studied this question.
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