Dependence of misfit dislocation velocities upon growth technique and oxygen content in strained GexSi1−x/Si(100) heterostructures

Misfit dislocation velocities in strained GexSi1−x/Si(100) heterostructures are compared for layers grown by molecular beam epitaxy and limited reaction processing. We demonstrate that velocities are substantially lower in structures with oxygen concentrations ∼1020 cm−3 compared to layers with oxygen concentrations ∼1018 cm−3. For layers with the lower oxygen concentration, the sample growth technique does not appear to be a significant factor affecting misfit dislocation velocity.