A 29-mm/sup 2/, 16-Mb divided bitline NOR (DINOR) flash memory is fabricated using 0.25-/spl mu/m triple-well three-layer-metal CMOS technology. Read access time is 72 ns at 1.8 V. A poly diode charge-pump technique improves pump efficiency and eliminates the body effect problem.
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Miyawaki et al. (1999) studied this question.
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