Device simulation of cuprous oxide heterojunction solar cells

We developed a device simulation model of cuprous oxide (Cu 2 O)-based heterojunction solar cells. The developed model well reproduces the reported experimental current density–voltage characteristics and the external quantum efficiency results. By using the model, we explored structures for high-efficiency Cu 2 O-based heterojunction solar cells. It was found that the electron affinity of the buffer layer between transparent conducting oxide and Cu 2 O significantly affects solar cell performance. Surface recombination on the rear side of the device can be suppressed by employing a highly doped back surface layer. Our device simulation demonstrates a conversion efficiency of 16% without any optical confinement structure.