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August 1, 1994Applied Physics Letters

Valence-band discontinuity between GaN and AlN measured by x-ray photoemission spectroscopy

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Authors

GMG. MartinUniversity of Central FloridaSSS. StriteIBM (United States)ABA. BotchkarevCentre National de la Recherche Scientifique

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Martin et al. (1994) studied this question.

synapsesocial.com/papers/6a82a3fafb68d755121c2134https://doi.org/10.1063/1.112247
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Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Precise Determination of the Valence-Band Edge in X-Ray Photoemission Spectra: Application to Measurement of Semiconductor Interface Potentials1980 · 1,485 citations
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  3. 3Metalorganic Vapor Phase Epitaxial Growth and Properties of GaN/Al0.1Ga0.9N Layered Structures1991 · 94 citations
  4. 4Photoluminescence characteristics of AlGaN-GaN-AlGaN quantum wells1990 · 114 citations
  5. 5Gallium Nitride Studied by Electron Spectroscopy1980 · 102 citations