Uniaxial stress dependence of exciton emission from seeded physical vapor transport ZnSe

Uniaxial stress dependence of photoluminescence has been employed to study the exciton emission in seeded physical vapor transport ZnSe. By examining the stress behavior of the photoluminescence line Ix , it is suggested that this line is due to recombination of a deep donor-bound exciton. From measurements of the π- and σ-polarized luminescence spectra the heavy-hole and light-hole components of the exciton emissions were followed as a function of applied stress. From these data the linear hydrostatic and shear deformation potential constants were calculated to be a=−5.1 and b=−0.74 eV, respectively.