Three-dimensional all metallic photonic crystals with a feature size of 0.20 μm were fabricated using electron-beam lithography with the photoresist of hydrogen silesquioxane. This process method has high compatibility with the fabrication of damascene copper interconnections and also simplifies the whole process flow. The dependence of the complete photonic band gaps on polarization was experimentally observed and compared with the simulation results. The band edge for the four-layer lattice was found at a wavelength of around 0.80 μm in normal incidence.
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Yang et al. (2009) studied this question.
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