Resistance switching effect in Nb-doped SrTiO3 (100) bicrystal with (100) ∼45° twist boundary

We have fabricated Nb-doped SrTiO3 bicrystals with (100) ∼45° twist boundary by changing the fabricating conditions and demonstrated that they can exhibit a large resistance switching effect. Nb:SrTiO3 bicrystals cooled at the rate of −300 K/h show an asymmetric large hysteresis in current-voltage characteristics and the magnitude of resistance change attains two orders of magnitude. The resistance state can also be switched by the application of voltage pulses with different polarity and both states can be memorized for over 5 h at room temperature. From experimental results, it can be speculated that the twist boundary could be an origin of large resistance switching and memory effects and it behaves like an electrode interface in SrRuO3/Nb:SrTiO3 Schottky junction devices.