Annealing effects have been studied for thin-film transistors (TFTs) with excimer-laser recrystallized large-grain poly-Si films. Electron field-effect mobility of about 350 cm2/V·s, i.e., much higher than the typical value, can be obtained by simple vacuum anneal. Effects of atomic hydrogen and molecular hydrogen anneals are also identified.
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Choi et al. (1994) studied this question.
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