Gas Source Molecular Beam Epitaxial Growth of ZnSe Using Metal Zn and H2Se

ZnSe films were grown on GaAs substrates by gas source molecular beam epitaxy using metal Zn and H2Se as sources. H2Se was thermally cracked in a high pressure gas cell. The effects of growth temperature, VI/II ratio and H2Se cracking temperature on ZnSe growth were investigated. Under the condition where the cracked- H2Se flux controlled the growth rate, ZnSe films with smooth surface morphology were obtained at growth temperatures between 250 and 410° C. With increasing cracked- H2Se flux and/or H2Se cracking temperature, facets emerged on the growing surface and surface morphology was degraded.