High conductivity p-type CdS was formed by ion implanting Bi into n-type single crystals. Hall measurements and lifetime studies were performed on the implanted layers. p-n junctions were formed in high conductivity n-type material and light emission observed in the forward direction. By making two independent contacts to the p-type layer and measuring their I-V characteristics, it was determined that they were not rectifying.
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Chernow et al. (1968) studied this question.
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