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A strategy for improving the photoresponse for junctions based on crystalline and polycrystalline semiconductors is presented. Porous etching is used to produce a layer (e.g., see Figure) within which the light is more effectively absorbed. By tailoring the porous layer, it is possible to ensure that the minority carriers, while generated deep within the semiconductor, are nevertheless able to reach the junction without recombining magnified image .
Erné et al. (1995) studied this question.