Silicone-based positive electron beam resist (SPR) developable with alkaline aqueous solution is first reported. SPR is composed of acetylated polyphenylsilsesquioxane and poly(methylpentene sulfone) as a dissolution inhibitor. Resist sensitivity of SPR reaches up to 5 µC/cm2 for 20 kV electron beam exposure. A two-layer resist system of SPR and a hard baked novolak resin reveals good performance for 0.8 µm pitch line and space pattern fabrication.
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Ban et al. (1988) studied this question.
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