An InP-based p-i-n photodiode with optical response out to 3.4was designed and grown by molecular beam epitaxy (MBE). One hundred pairs of 7-nmIn0.34Ga0.66As/5-nmGaAs0.25Sb0.75quantum wells strain compensated to InP were used as the absorption region. The device showed a dark current density of 9.6 mA/cm²under$-$0.5-V reverse bias, a responsivity of 0.03 A/W, and a detectivity of2.0× 10⁸\ cm1/2⁻¹at 3at 290 K.
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Chen et al. (2010) studied this question.
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