Recessed-Gate Enhancement-Mode β -Ga2O3 MOSFETs

We report enhancement-modeβ-Ga2O3(BGO) MOSFETs on a Si-doped homoepitaxial channel grown by molecular beam epitaxy. A gate recess process is used to partially remove the epitaxial channel under the 1-μ mgated region to fully deplete atVGS= 0V. BGO MOSFETs achieve drain current density near 40 mA/mm andION/IOFFratio ~109which is the highest reported for homoepitaxial normally-off BGO transistors. AtVGS= 0V, a breakdown voltage of 198 and 505 V is achieved with the source–drain spacing of 3 and8~μ m, respectively. The power switching figure of merits for dc conduction and dynamic switch losses meet or exceed the theoretical silicon limit and previously reported depletion-mode BGO transistors.