The interface state density (Dit) at the interface between β-Ga2O3(2̅01) and atomic layer deposited (ALD) SiO2dielectric is extracted using Terman method and conductance method. The effect of the different surface treatments on the extracted Ditwas also studied. It is observed that the extracted Ditof 6 × 1011cm-2eV-1for the sample with no surface treatment is lower than hydrofluoric and hydrochloric acid treated samples. Low Ditsample shows narrow peak in the conductance method, suggesting a smooth interface. The extracted low Ditmakes ALD SiO2an attractive candidate for future Ga2O3power devices.
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Zeng et al. (2016) studied this question.
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