Carrier removal in Ga2O3 polymorphs under ion irradiation

Irradiation-induced carrier removal is one of the major issues limiting utilization of materials in radiation-hard electronics. On the other hand, ion-beam-irradiation induced selective formation of highly resistive areas could be used for device isolation in electronic technology. Here we study the role of MeV light-ion irradiation on a conductivity evolution in α-Ga 2 O 3 thin films. The results show that the dose dependence of sheet resistance exhibits a threshold-like behavior associated with decrease of free carrier concentration and lowering carrier mobility. The results can be adequately explained in the framework of a quantitative model based on the irradiation-induced formation of “defect-shallow dopant” complexes efficiently reducing free carrier concentration. Moreover, to prove the validity and versatility of used approaches, this model was successfully applied for the results of conductivity degradation in β-Ga 2 O 3 irradiated with different ions. The obtained results can be used for better understanding radiation phenomena in Ga 2 O 3 polymorphs paving the way for improvement of implant technology in Ga 2 O 3 -based devices and development of radiation-tolerant electronic devices.