The complex of a divalent silicon interstitial and a pair of adjacent oxygen intersitials is proposed as the core of the 450 ^∘{}C oxygen thermal donor in silicon. The proposal is supported by theoretical calculations which suggest that this complex is stable relative to a self-interstitial and two separated oxygen interstitials, and that it has a doubly occupied level close to the computed conduction-band edge. The calculated spin distribution is in qualitative agreement with the one found experimentally for the NL8 center.
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Deák et al. (1991) studied this question.
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