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Experimental characterization demonstrates altered electronic structures and enhanced switching performance in germanium-selenium glass, indicating a trade-off with thermal stability.
We studied Ge x Se 1− x for the potential application in the Ovonic Threshold Switching (OTS) device. We found that, as Ge concentration increased, the thermal stability was deteriorated while the device performances were improved. In addition, using Spectroscopic Ellipsometry (SE) technique, the energy gap ( E g ) and the Urbach energy ( E U ) were found to show non-monotonic dependences, with their minimum of about 1.0 eV of E g for Ge 0.6 Se 0.4 and 40 meV of E U for Ge 0.5 Se 0.5 . These changes are consistent with the changes in device characteristics, which might be explained in terms of the change in the number of Se-Se bondings.
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Kim et al. (2013) studied this question.
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