We report the dependence of the electronic properties on the metal composition and oxygen content of transparent conducting amorphous indium zinc oxide (a-IZO) films deposited by dc magnetron sputtering. a-IZO shows a clear Burstein--Moss shift with an effective optical band gap of 3.10.3em0exeV independent of the metal composition. A metal-composition-independent dependence of the mobility (μ) on carrier concentration $(N)$ is also found for a-IZO with μₘₐₓ=540.3em0excm²∕V0.2em0exs at N=1.3×10²⁰0.3em0excm^-3. The electron transport, thermally activated at N10¹⁹0.3em0excm^-3, becomes limited by lattice scattering at N≈10²⁰0.3em0excm^-3 and then by ionized impurity scattering at N>5×10²⁰0.3em0excm^-3.
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Leenheer et al. (2008) studied this question.
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