Model of interface states at III-V oxide interfaces

We present a generalized model of the density of interface states at III-V oxide interfaces. The states are based on the native defects such as dangling bonds on the Ga and As sites or As–As bonds created by oxidation. The model explains the difficulty of n-type operation for GaAs field effect transistors (FETs) compared to GaAs pFETs or to InGaAs nFETs.