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The optical modulation technique is used for direct determination of energy levels and the effective correlation energy Ueff of dangling-bond defects. With an accuracy of 0.1 eV we found for the dangling-bond defect in a-Si: H, Ueff=0.5 eV; in a-As₂{S}₃$, ${U}eff={-}1.0$ eV; in ${As}₂Se₃, Ueff=-0.7 eV; and in trans-(CH)ₓ, Ueff=0.95 eV.
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Vardeny et al. (1985) studied this question.
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