The amorphous-to-crystal transition has been studied by in-situ resistance measurements for Ge 2 Sb 2 Te 5 (GST) thin films doped with silicon (Si) or nitrogen (N). It was found that the electrical properties and thermal stability of GST films can be improved by doping small amount of Si in the GST film. In comparison with Si doping, the N doping effects have also been studied and it was revealed that both the Si- and N-doping can increase the electrical conduction activation energy and enhance thermal stability of amorphous GST.
No takes yet. Share an insight, caveat, or question.
Ling et al. (2006) studied this question.
Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context: