Analytical approximation for perturbation of MOSFETsurface potential by polysilicon depletion layer

Compact MOSFET models require a computationally efficient description of the polysilicon depletion effect. An analytical solution is presented for the perturbation of the MOSFET surface potential by the polysilicon depletion region. Unlike earlier closed-form approximations, the new result is valid in all regions of the device operation and is compatible with surface-potential-based MOSFET models.