This paper presents the temperature modelling in BSIM3v3 (Berkeley Short-channel IGFET Model version 3), and comparison with measured data for both n- and p-channel devices with a channel length down to a quarter of a micrometre from room temperature up to C. I - V, and are modelled with the temperature dependences of mobility, threshold voltage, saturation velocity and series resistance.
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Cheng et al. (1997) studied this question.
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