Channeling−effect study of deuteron−induced damage in Si and Ge crystals

The disorder produced by 0.3−MeV D+ in Si and Ge at 80 °K has been analyzed in situ by 1.5−MeV D+ channeling measurements. Differences of about 10% have been found in the ψ1/2 values between the undamaged and damaged crystal. On the basis of the Lindhard continuum potential approximation, an average displacement of 0.15 Å from the row is required to explain the observed ψ1/2 decrease.