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Molecular beam epitaxy of Al doped n-type ZnSe is studied. Growth conditions such as Al cell temperature and substrate temperature are systematically examined. The electrical, optical and structural properties of ZnSe : Al layers are investigated. ZnSe : Al layers show high electron concentration of 8.37 × 1018 cm—3 with low electrical conductivity of 6.92 × 10—3 Ω cm along with high crystallinity.
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Takai et al. (2002) studied this question.
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