Iodine Doping in ZnSe in High-Temperature Range by Metalorganic Vapor-Phase Epitaxy

Iodine doping in ZnSe was studied by means of atmospheric-pressure (AP) metalorganic vapor-phase epitaxy (MOVPE). Electron concentration greater than 1×10 18 cm -3 was observed for growth temperatures above 500°C, and the photoluminescence from the doped ZnSe films was dominated by the neutral-donor bound exciton line. The growth temperature dependence curve of the electron concentration in the doped films was gentle up to the growth temperature of 580°C, in contrast to the sharp decrease in electron concentrations above the growth temperature of 400°C in low-pressure (LP) MOVPE. The main factor that gives the great difference in the doping properties between AP- and LP-MOVPE is discussed from the viewpoint of the working pressure.