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May 1, 1988Japanese Journal of Applied Physics

Nitrogen Doped p-Type ZnSe Layer Grown by Metalorganic Vapor Phase Epitaxy

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Authors

AOAkira OhkiKagoshima UniversityNSNoriyoshi ShibataToyota Motor Corporation (Japan)SZSakae ZembutsuNTT (Japan)

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Ohki et al. (1988) studied this question.

synapsesocial.com/papers/6a202dff6ed993cb49fc0036https://doi.org/10.1143/jjap.27.l909
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  1. 1Photoluminescence properties of nitrogen-doped ZnSe layers grown by molecular beam epitaxy with low-energy ion doping1986 · 57 citations
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