High-Quality ZnSe Film Growth by 0.1-atm MOVPE under the Diethylzinc Diffusion-Limited Condition

The effects of the growth conditions on the growth rate, crystallographic and luminescence properties were investigated for ZnSe film growth by metalorganic vapor phase epitaxy at 0.1 atm using diethylzinc and H2Se. It was shown that high-quality epitaxial layers can be grown under the diethylzinc diffusion-limited condition over temperatures ranging from 250 to 500°C. These layers exhibit dominant blue photoluminescence at 77 K. However, the optimum growth temperature for ZnSe layers having a smooth surface and high crystallographic properties is restricted to within the region between 300 and 400°C.