Growth of High-Quality ZnSe Films by Low-Pressure Metalorganic Chemical Vapor Deposition

Effects of growth conditions, especially substrate temperature, on the electrical and photoluminescence properties of nominally undoped ZnSe films grown on GaAs substrates by low-pressure MOCVD have been studied. It has been shown that the substrate temperature remarkably affects the electrical and photoluminescence characteristics of films. It was found that high conductivity ZnSe films can be grown without intentional doping, and that high-quality ZnSe films involving low-concentration electron-scattering centers and exhibiting a strong blue near-band-edge emission can be grown.