Synapse
⌘+K
Synapse
PulseExploreClubsResearchersJournals
Instagram
HomeClubsExplore
September 1, 1983Applied Physics Letters

High-quality ZnSe thin films grown by molecular beam epitaxy

View Full Paper
Ask AI
Bookmark
Share

Authors

TYTakafumi YaoNational Institute of Advanced Industrial Science and TechnologyMOMutsuo OguraTokyo Institute of TechnologySMSeiji MatsuokaDrug Discovery Laboratory (Norway)

Discussion

Loading...

Member takes

Implication

Key Points

Key points are not available for this paper at this time.

Cite This Study

Yao et al. (1983) studied this question.

synapsesocial.com/papers/6a7bd9d1a540d02696c2a490https://doi.org/10.1063/1.94366
View Full Paper
Ask AI
Bookmark
Share

Also Consider

Synapse has enriched 3 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Carrier Mobility and Shallow Impurity States in ZnSe and ZnTe1963 · 223 citations
  2. 2Electron mobility and carrier concentration of heteroepitaxial zinc selenide1982 · 18 citations
  3. 3Molecular beam epitaxial growth of low-resistivity ZnSe films1979 · 71 citations