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Low-energy ion doping of nitrogen has been employed in the molecular beam epitaxial (MBE) growth of ZnSe on GaAs substrates in an attempt to obtain p-type crystals. Low-temperature photoluminescence (PL) measurements of the N-doped ZnSe indicated a formation of shallow acceptors with an activation energy around 110 meV. The PL spectrum in the excitonic emission region was dominated by an acceptor bound-exciton emission I1 at 2.790 eV, suggesting a remarkable increase of an acceptor concentration in comparison with the previous work by MBE using a neutral doping source.
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Mitsuyu et al. (1986) studied this question.
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