Electrical and Photoluminescence Properties of Iodine-Doped ZnSe Films Grown by Low-Pressure MOVPE

Iodine-doped ZnSe films have been grown on GaAs by low-pressure MOVPE. It has been shown that the electrical properties of the films can be controlled over a wide range by using diluted ethyliodide as a dopant source. Effects on the properties of ZnSe films of the doping levels and the growth temperature have been investigated separately, using low-temperature photoluminescence as a characterization method. Furthermore, it has been found that the sticking coefficient of iodine remarkably decreases with temperature, resulting in a growth of lower carrier-concentration films at higher growth temperatures.