Use of Ethyliodide in Preparation of Low-Resistivity n-Type ZnSe by Metalorganic Vapor Phase Epitaxy

Ethyliodide is shown to be useful as a dopant for growing high-quality n-type ZnSe layers by metalorganic vapor phase epitaxy. Low-resistivity ZnSe single-crystal layers with ρ<0.002 Ω·cm and n>1019 cm-3 have been grown on (100) GaAs substrate. The grown layers, with an appropriate doping level (n∼1018 cm-3), show a strong blue near-band-edge photoluminescence at room temperature. The emission intensity from the layer is several hundred times stronger than that from the undoped ZnSe.