Tuning Electrical and Photoelectrical Properties of CdSe Nanowires via Indium Doping

n-Type doping of CdSe nanowires is achieved by either co-evaporating indium at different temperatures during growth, or post-growth doping via a thermal diffusion process. The conductivity of CdSe nanowires is tuned reproducibly by nearly five orders of magnitude in a controlled way, and carrier concentration as high as ∼1019 cm−3 is reached (see image). The doped CdSe nanowires show high sensitivity to light irradiation.