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Capacitance-voltage profiles on δ-doped GaAs grown by molecular beam epitaxy reveal extremely narrow widths of ≲40 Å at room temperature. Subband structure and capacitance-voltage (C-V) profiles of δ-doped GaAs are calculated self-consistently. Experimental C-V profiles agree with self-consistent results, only if we assume that Si impurities are localized on the length scale of the lattice constant in the host GaAs zinc-blende lattice.
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Schubert et al. (1988) studied this question.
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