The work is devoted to investigation of stable color centers (CC) that are created in Gd3Ga5O12 (GGG) crystals under irradiation with γ‐quanta (E = 1.25 MeV, D = 105 Gy ) as well as transient CC created in the crystals under irradiation with pulsed electron beam (E = 0.25 MeV, pulse duration 10 ns, fluence 1012 cm‐2, time interval of registration 0‐500 ns). On the basis of the performed study of optical absorption spectra of the as‐grown and irradiated crystals it was established the correlation between a defect subsystem of as‐grown crystals and a type of CC induced by radiation in the crystals. The role of Ca2+ dopant ions in the processes of CC formation is examined. Models of the stable and transient CC are proposed. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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Matkovskii et al. (2004) studied this question.
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