Reflectance anisotropy spectrometry is used to study the electronic properties of sulfide-passivated GaAs. The optical technique allows measurement of the Fermi-level displacement at the surface in situ, while the sample is immersed into a sulfide solution. The kinetics of the process was found to be very sensitive to conductivity type and doping level in GaAs.
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Berkovits et al. (1991) studied this question.
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