An Atomic Model of Electron-Irradiation-Induced Defects on {113} in Si

An atomic model of defects on {113} in Si has been derived experimentally from high-resolution electron micrographs. A simulated image of the proposed model agrees well with experiment. The model is constructed by two kinds of structural units. One is incorporated by self interstitial atoms to form tiny rods of the hexagonal Si. The atomic arrangement of this unit was proposed by Bourret (1987) and Tan et al. (1981). Another structural unit is characterized by eight-membered-atom rings. These two kinds of the units are arranged on a {113} plane without any dangling bond and any kink of a defect plane.