Complexity of Small Silicon Self-Interstitial Defects

The combination of long-time, tight-binding molecular dynamics and real-time multiresolution analysis techniques reveals the complexity of small silicon interstitial defects. The stability of identified structures is confirmed by ab initio relaxations. The majority of structures were previously unknown, demonstrating the effectiveness of the approach. A new, spatially extended tri-interstitial ground state structure is identified as a probable nucleation site for larger extended defects and may be key for the compact-to-extended transition.