Physical and Electrical Properties of Atomic-Layer-Deposited Hf[sub x]Zr[sub 1−x]O[sub 2] with TEMAHf, TEMAZr, and Ozone

In this work, physical and electrical characteristics of atomic-layer-deposited formed using tetrakis-ethyl methylaminohafnium (TEMAHf), tetrakis-ethylmethylaminozirconium (TEMAZr), and ozone are reported. Confirming Zr addition, film densities decrease with increasing Zr content. A slight increase in interfacial layer thickness is observed for after high-temperature annealing. All films remain smooth and void-free after high-temperature annealing. Tetragonal phase stabilization is observed with increasing Zr content. Carbon impurities are low and independent of Zr content. transistors and capacitors are fabricated for electrical characterization. Well-behaved capacitance–voltage characteristics are observed for all devices. Only a slight increase in gate leakage current is observed as Zr content is increased from to . devices have lower threshold voltage than devices. High field mobilities of devices with 50 and 60% Zr content are higher than or . All these results indicate is a promising dielectric for replacement.