Characteristics of planar n-p junction diodes made by double-implantations into 4H-SiC

Double implantation technology consisting of deep-range acceptor followed by shallow-range donor implantation was used to fabricate planar n/sup +/-p junction diodes in 4H-SiC. Either Al or B was used as the acceptor species and N as the donor species with all implants performed at 700/spl deg/C and annealed at 1650/spl deg/C with an AlN encapsulant. The diodes were characterized for their current-voltage (I-V) and capacitance-voltage (C-V) behavior over the temperature range 25/spl deg/C-400/spl deg/C, and reverse recovery transient behavior over the temperature range 25/spl deg/C-200/spl deg/C. At room temperature, the B-implanted diodes exhibited a reverse leakage current of 5/spl times/10/sup -8/ A/cm/sup 2/ at a reverse bias of -20 V and a carrier lifetime of 7.4 ns.