Boron-implanted 6H-SiC diodes

Ion implanted planar p-n junctions are important for silicon carbide discrete devices and integrated circuits. Conversion to p-type of n-type 6H-SiC was observed for the first time using boron implantation. Diodes were fabricated with boron implants at 25 and 1000 °C, followed by 1300 °C post-implant annealing in a furnace. The best diodes measured at 21 °C exhibited an ideality factor of 1.77, reverse bias leakage of 10−10 A/cm2 at −10 V, and a record high (for a SiC-implanted diode) breakdown voltage of −650 V.