Planar aluminum-implanted 1400 V 4H silicon carbide p-n diodes with low on resistance

Planar p-n diodes with edge termination were fabricated by aluminum implantation on n-type 4H silicon carbide. These diodes exhibited an excellent blocking behavior up to 1400 V reverse voltage with stable avalanche breakdown at an electric field strength of 2.8 MV/cm. In addition, a nearly classical forward characteristic was observed with both recombination and diffusion current mechanism represented by ideality factors of 1.05 and 1.93, respectively. The turn-on voltage was 2.8 V. At a forward voltage drop of 6.2 V a current density of 4000 A/cm2 and a differential on resistance below 1 mΩ cm2 were achieved.