Diode lasers with an intracavity electroabsorption modulator have been fabricated in the GaInAsP/InP material system. The additional absorption loss produced by operating the modulator near maximum reverse bias increased the laser threshold by a factor of as much as 2.9 relative to the threshold with the modulator open circuited. Large depth of modulation of the laser output at frequencies up to 2.5 GHz, the measurement system limit, has been achieved by application of a microwave signal to the modulator.
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Tsang et al. (1981) studied this question.
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