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We report strong room-temperature intersubband absorption in 80 {} strain-compensated In0.84Ga0.16As/AlAs/In0.52Al0.48As double-barrier quantum wells grown on InP substrates. From the multiple {Γ}-{Γ} intersubband transitions observed, it is inferred that the electron effective masses and nonparabolicity parameters for the first two subbands differ significantly from each other. For the range k~5×10⁶--6×10⁶cm^-1, the difference in subband parameters results in a change in transition energy of about twice the value calculated for the corresponding GaAs/AlGaAs quantum well.
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Gupta et al. (2004) studied this question.
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